| Time | 
  Speaker | 
  Subject | 
  | 11:00 | 11:45 | 
   José Coutinho | 
   Oxygen defects in silicon and germanium | 
  | 11:45 | 12:15  | 
   Jonathan Goss | 
   Hydrogen in diamond | 
  | 12:15 | 12:45 | 
   Christopher Latham | 
   Carbon in compound semiconductors | 
  | 12:45 | 14:00 | 
   | 
   Lunch | 
  | 14:00 | 14:30  | 
   Ron Newman | 
   Carbon defects in InP | 
  | 14:30 | 15:00  | 
   James Coomer | 
   Interstitial and vacancy defects in Si and diamond | 
  | 15:00 | 15:30 | 
   Ben Hourahine | 
   Carbon-hydrogen defects in silicon | 
  | 15:30 | 16:00 | 
    Markus Kaukonen | 
   Vacancy-tin defects in silicon | 
  | 16:00 | 16:30 | 
   Caspar Fall | 
   Magnesium-hydrogen and hydrogen in GaN | 
  | 16:30 | 17:00 | 
   Stefan Birner | 
   Interstitials in germanium | 
  | 17:00 | 17:30 | 
   Pat Briddon | 
   News from Newcastle | 
  | 17:30 | 18:00 | 
   | 
   Discussion |