Time | Speaker | Subject | |
11:00 | 11:45 | José Coutinho | Oxygen defects in silicon and germanium |
11:45 | 12:15 | Jonathan Goss | Hydrogen in diamond |
12:15 | 12:45 | Christopher Latham | Carbon in compound semiconductors |
12:45 | 14:00 | Lunch | |
14:00 | 14:30 | Ron Newman | Carbon defects in InP |
14:30 | 15:00 | James Coomer | Interstitial and vacancy defects in Si and diamond |
15:00 | 15:30 | Ben Hourahine | Carbon-hydrogen defects in silicon |
15:30 | 16:00 | Markus Kaukonen | Vacancy-tin defects in silicon |
16:00 | 16:30 | Caspar Fall | Magnesium-hydrogen and hydrogen in GaN |
16:30 | 17:00 | Stefan Birner | Interstitials in germanium |
17:00 | 17:30 | Pat Briddon | News from Newcastle |
17:30 | 18:00 | Discussion |