Theoretical Physics
ICDS '95 - Sendai, Japan
The following is a downloadable list of the papers we have presented
this year at the ICDS '95 international defects conference in Sendai,
Japan.
A complete list of the papers we have
on-line is also available.
1. A First Principles Investigation of Vacancy Oxygen defects in Si
2. A First Principles Study Of Ni Defects In Synthetic Diamond
3. Interstitial H and the dissociation of C-H defects in GaAs
4. Peculiarities of interstitial carbon and di-carbon defects in Si
5. Theory of the NiH_2 Complex in Si and the CuH_2 Complex in GaAs
6. Theory of Si delta-doped GaAs
7. Vacancy- and acceptor- H complexes in InP
Last modified: Tue Jul 18 11:50:45 1995
Chris Ewels.