Semiconductor Science and Technology, 9 (11) 2145-2148 (1994)

Theoretical and Isotopic infrared absorption investigations of nitrogen - oxygen defects in silicon

R. Jones, C. Ewels and J. Goss

Department of Physics, University of Exeter, Exeter, EX4 4QL, UK.

J. Miro and P. Deák

Department of Atomic Physics, Technical University of Budapest, Budafoki út 8, H-1111 Budapest, Hungary.

S. Öberg

Department of Mathematics, University of Luleå, Luleå, S95187, Sweden.

F. Berg Rasmussen

Institute of Physics and Astronomy, University of Aarhus, DK-8000, Århus C, Denmark.

(Received 18 August 1994; accepted for publication 22 September 1994)

Abstract

The vibrational spectroscopy of NNO defects in Si introduced by $^{16}$O, $^{14}$N and $^{15}$N ion implantation is studied, and especially the N-isotopic shifts of the localized vibrational modes. These investigations show that the local modes of the three impurity atoms comprising the defect are only weakly coupled dynamically. Ab initio cluster calculations of the local mode frequencies of the defect are performed. Several models are investigated, and the model consisting of a bridging O atom adjacent to the N pair defect account for its dynamic properties.

Keywords: Czochralski-Silicon, Thermal Donors, Complexes