Department of Physics
Dr. R. Jones publications in 1994

Up to the index or back to Dr. R. Jones publications in 1995 (4 publications).

Theory of Carbon in Aluminium Arsenide
R. Jones, S. Öberg
Phys. Rev. B 49, 5306-12, 1994.

Observation and Theory of the H2 defect in Silicon
B. Bech Nielsen, J. Holbech, R. Jones, P. Sitch, S. Öberg
ICDS-17 ed J. Jantsch, Materials Science Forum 845-52, Trans Tech Publications, Zürich, p.143-7, 1994.

The nitrogen pair in crystalline Silicon studied by Ion Channelling
F. Berg Rasmussen, B. Bech Nielsen, R. Jones, S. Öberg
ICDS-17 ed J. Jantsch, Materials Science Forum 1221-26, Trans Tech Publications, Zürich, p.143-7, 1994.

Theory of Dislocations in Gallium Arsenide
R. Jones, P. Sitch, S. Öberg, M. Heggie
ICDS-17 ed J. Jantsch, Materials Science Forum 143-47, Trans Tech Publications, Zürich, p.143-7, 1994.

Theory of Carbon Complexes in Gallium and Aluminium Arsenide
R. Jones, S. Öberg
ICDS-17 ed J. Jantsch, Materials Science Forum 143-47, Trans Tech Publications, Zürich, p.253-8, 1994.

Theory of Nitrogen Aggregates in Diamond : the H3 and H4 defects
R. Jones, V. Torres, P. Briddon, S. Öberg
ICDS-17 ed J. Jantsch, Materials Science Forum 143-47, Trans Tech Publications, Zürich, p.45-50, 1994.

Passivation and Reactivation of P,H pairs in Si
S. Estreicher, R. Jones
ICDS-17 ed J. Jantsch, Materials Science Forum 143-47, Trans Tech Publications, Zürich, p.1215-1220, 1994.

Hydrogen Passivated Carbon Acceptors in GaAs and AlAs : No evidence for Carbon Donors
R. Newman, B. Davidson, R. Pritchard, T. Bullough, T. Joyce, R. Jones, S. Öberg
MRS Res. Soc. Symp. Proc. Vol. 325, 241-6, Mat. Res. Soc., 1994.

The energetics of hydrogenic reactions at diamond surfaces calculated by a local spin-density functional theoretical method
C. Latham, M. Heggie, R. Jones, P. Briddon
Diamond and Related Materials 3, 1370-74, 1994.

Impurity Effects on the Dislocation Structure in GaAs
P. Sitch, R. Jones, M. Heggie, S. Öberg
Solid State Phenomena 35-36, 501-6, 1994.

Identification of the Dominant Nitrogen Defect in Silicon
R. Jones, S. Öberg, F. Berg Rasmussen, B. Bech Nielsen
Phys. Rev. Lett. 72, 1882-5, 1994.
Postscript

Ab Initio Calculations of Anharmonicity of the C-H stretch mode in HCN and GaAs
R. Jones, J. Goss, C. Ewels, S. Öberg
Phys. Rev. B 50, 8378-88, 1994.
Abstract Postscript

Neutralisation of Group VI donors by hydrogen in gallium arsenide
R. Rahbi, B. Theys, R. Jones, B. Pajot, S. Öberg, K. Somogyi, M. Fille, J. Chevallier
Solid State Communications 91, 187-90, 1994.

Nitrogen in Germanium : Identification of the pair defect
F. Berg Rasmussen, R. Jones, S. Öberg
Phys. Rev. B 50, 4378-84, 1994.

Theoretical and Isotopic Infrared Absorption Investigations of Nitrogen-Oxygen Defects in Silicon
R. Jones, C. Ewels, J. Goss, J. Miro, P. Deák, S. Öberg, F. Berg Rasmussen
Semicond. Sci. and Tech. 9, 2145-48, 1994.
Postscript

Theory of Si Donor-Acceptor Complexes in GaAs
R. Jones, S. Öberg
Semicond. Sci. and Tech. 9, 2291-4, 1994.
LaTeX

Forward to Dr. R. Jones publications in 1993 (13 publications).