Up to the index or back to Dr. R. Jones publications in 1991 (12 publications).
Ab initio Calculations on Thermal Donors in Si : an over-coordinated O atom model for the NL10 and NL8 centres
R. Jones
Semicond. Sci. and Tech. 5, 255-90, 1990.
Ab Initio Calculations on the Passivation of Shallow Impurities in GaAs
P. Briddon, R. Jones
Phys. Rev. Lett. 64, 2535-8, 1990.
Atomic Cluster Calculations and Solid State Physics
R. Jones
psi_k Newsletter No. 14, 3-5, 1990.
Interaction of Phosphorus with Dislocation Cores in Silicon
M. Heggie, R. Jones, A. Umerski
Materials Science Forum 65-66, 265-270, 1990, Trans Tech Publications, Zürich, Switzerland.
Ab initio Calculations on Interstitial O Clusters in Silicon
R. Jones, S. Öberg, A. Umerski
Materials Science Forum 65-66, 287-292, 1990, Trans Tech Publications, Zürich, Switzerland.
Hydrogen-Impurity Complexes in GaAs
P. Briddon, R. Jones
Materials Science Forum 65-66, 169-174, 1990, Trans Tech Publications, Zürich, Switzerland.
The Single Substitutional N defect and the A-centre in Diamond
P. Briddon, R. Jones
Proc. of the Diamond Conference p. 18, Reading, 1990.
The N-C Platelet Model
P. Briddon, M. Heggie, R. Jones
Proc. of the Diamond Conference p. 19, Reading, 1990.
Ab Initio Calculations on Metastable Defects in a:Si-H : the Staebler-Wronski effect
R. Jones, G. Lister
Phil. Mag. 61, 881, 1990
Hydrogen and Muonium in Silicon
P. Briddon, R. Jones
Hyperfine Interactions 64, 593-602, 1990.
Comments on the Stability of Charge States and Locations for Hydrogen and Muonium in Semiconductors
S. Cox, P. Briddon, R. Jones
Hyperfine Interactions 64, 603-12, 1990.
Forward to Dr. R. Jones publications in 1989 (3 publications).