Up to the index or back to Dr. R. Jones publications in 1984 (1 publication).
The Recursion Method and a First Principles Tight Binding Calculation of the Band Structure of Diamond and Silicon
R. Jones, T. King
Phil. Mag. B 481-90, 1983.
Calculation of Local Densities of States at defects in Diamond and Silicon
R. Jones, T. King
Physica 116B, 72-5, 1983.
The Recursion Method and the Electronic Charge Density in Diamond and Silicon
R. Jones, T. King
Phil. Mag. B 47, 491-3, 1983.
The Recursion Method: Application to Ideal and reconstructed Vacancies in Diamond and Silicon
R. Jones
Phil. Mag. 48, 391-6, 1983.
A Theoretical Interpretation of Dislocation Glide in Silicon
R. Jones
Inst. of Phys. Conf. Series 67, 45-53, 1983.
Calculation of the localised electronic states associated with static and moving dislocations in silicon
R. Jones, M. Heggie
Phil. Mag. B 48, 379-90, 1983.
Solitons and the Electrical and Mobility Properties of Dislocations in Silicon
R. Jones, M. Heggie
Phil. Mag. B 48, 365-77, 1983.
Theories of Dislocation Mobility in Semiconductors
R. Jones
J. de Physique, C 4-61, 1983.
Band Structure of Vacancies and Dislocations in Diamond
R. Jones, T. King
J. de Physique, C 4, 461, 1983.
Energy Levels and Properties of defects on Reconstructed dislocations in Silicon
R. Jones, M. Heggie
J. de Physique, C 4-43, 1983.
Forward to Dr. R. Jones publications in 1982 (4 publications).