Department of Physics
Dr. R. Jones publications by Umerski, A.

Up to the index or back to Dr. R. Jones publications by Torres, V.J. (1 publication).

Interaction of impurities with dislocation cores in Silicon
M. Heggie, R. Jones, G. Lister, A. Umerski
Inst. of Phys. Conf. Series No. 104, Chap 1, p43-46, 1988.

Interaction of Phosphorus with Dislocation Cores in Silicon
M. Heggie, R. Jones, A. Umerski
Materials Science Forum 65-66, 265-270, 1990, Trans Tech Publications, Zürich, Switzerland.

Ab initio Calculations on Interstitial O Clusters in Silicon
R. Jones, S. Öberg, A. Umerski
Materials Science Forum 65-66, 287-292, 1990, Trans Tech Publications, Zürich, Switzerland.

Interaction of Impurities with Dislocation Cores in Silicon
M. Heggie, A. Umerski, R. Jones
Phil. Mag. A 63, 571-84, 1991.

Interaction of Hydrogen with Impurities in Semiconductors
R. Jones, S. Öberg, A. Umerski
Materials Science Forum 83-7, 551-62, 1991.

Ab initio Calculation of Local Vibratory Modes of Interstitial Oxygen in Silicon
R. Jones, A. Umerski, S. Öberg
Phys. Rev. B 45, 11321-3, 1992-I.

Interaction of Oxygen with Dislocation Cores in Silicon
A. Umerski, R. Jones
Phil. Mag. A 67, 905-15, 1993.

Density Functional Calculations of the Structure and Properties of Impurities in and Dislocations in Semiconductors
R. Jones, A. Umerski, P. Sitch, M. Heggie, S. Öberg
Phys. Stat. Sol., (a) 138, 369, 1993.

Ab Initio Total Energy Calculations of Impurity Pinning in Silicon
M. Heggie, R. Jones, A. Umerski
Phys. Stat. Sol., (a) 138, 383-7, 1993.

First-Principles Calculations of Dislocations in Semiconductors
R. Jones, A. Umerski, P. Sitch, M. I. Heggie, S. Öberg
Phys. Stat. Sol., (a) 137, 389-99, 1993.