Up to the index or back to Dr. R. Jones publications by Schaich, W. (1 publication).
Density Functional Calculations of the Structure and Properties of Impurities in and Dislocations in Semiconductors
R. Jones, A. Umerski, P. Sitch, M. Heggie, S. Öberg
Phys. Stat. Sol., (a) 138, 369, 1993.
First-Principles Calculations of Dislocations in Semiconductors
R. Jones, A. Umerski, P. Sitch, M. I. Heggie, S. Öberg
Phys. Stat. Sol., (a) 137, 389-99, 1993.
The H2 Defect in Crystalline Silicon
J. Holbech, B. Bech Nielsen, R. Jones, P. Sitch, S. Öberg
Phys. Rev. Lett. 71, 875-8, 1993.
Observation and Theory of the H2 defect in Silicon
B. Bech Nielsen, J. Holbech, R. Jones, P. Sitch, S. Öberg
ICDS-17 ed J. Jantsch, Materials Science Forum 845-52, Trans Tech Publications, Zürich, p.143-7, 1994.
Theory of Dislocations in Gallium Arsenide
R. Jones, P. Sitch, S. Öberg, M. Heggie
ICDS-17 ed J. Jantsch, Materials Science Forum 143-47, Trans Tech Publications, Zürich, p.143-7, 1994.
Impurity Effects on the Dislocation Structure in GaAs
P. Sitch, R. Jones, M. Heggie, S. Öberg
Solid State Phenomena 35-36, 501-6, 1994.
First Principles Calculations of the Energy Barrier to Dislocation Motion in Si and GaAs
S. Öberg, P. Sitch, R. Jones, M. Heggie
Phys. Rev. B In Press, 1995.
Postscript
The Structures of Dislocations in GaAs and their Modification by Impurities
P. Sitch, R. Jones, S. Öberg, M. Heggie
Phys. Rev. B Rapid Communications 50, 17717-720, 1995.
Postscript
Forward to Dr. R. Jones publications by Somogyi, K. (1 publication).