Department of Physics
Dr. R. Jones publications by Heggie, M.

Up to the index or back to Dr. R. Jones publications by Goss, J. (4 publications).

Electronic States of the Ideal and Reconstructed Vacancy in Silicon
R. Jones, M. Heggie
J. Phys. C 14, 4603-9, 1981.

Glide of Partial Dislocations in Silicon
R. Jones, M. Heggie
J. de Physique, C 1, 45-60, 1982.

Calculation of the localised electronic states associated with static and moving dislocations in silicon
R. Jones, M. Heggie
Phil. Mag. B 48, 379-90, 1983.

Solitons and the Electrical and Mobility Properties of Dislocations in Silicon
R. Jones, M. Heggie
Phil. Mag. B 48, 365-77, 1983.

Energy Levels and Properties of defects on Reconstructed dislocations in Silicon
R. Jones, M. Heggie
J. de Physique, C 4-43, 1983.

Electronic Structure of alpha quartz, the [10-10]surface and perfect stoichiometric dislocations
R. Jones, M. Heggie, M. Nylén
Phil. Mag., B 51, 573-80, 1985.

Dislocations and Defects in alpha quartz
R. Jones, M. Heggie, M. Nylén
Dislocations in Solids ed H Suzuki, T Ninomiya, K Sumino, S Takeuchi, University of Tokyo Press, 529-33, 1985.

Models of Hydrolytic Weakening in Quartz
M. Heggie, R. Jones
Phil. Mag. Lett., A 53, 65-70, 1986.

Density Functional Analysis of the hydrolysis of Si-O bonds in Disiloxane, application to hydrolytic weakening in quartz
M. Heggie, R. Jones
Phil. Mag. Lett. 55, 47-51, 1987.

Atomic Structure of Dislocations and Kinks in Silicon
M. Heggie, R. Jones
Inst. of Phys. Conf. Series Series, 87, 367-74, 1987.

Plastic Deformation and Hydrolytic Weakening in quartz : Electronic Mechanism
N. Nylén, M. Heggie, R. Jones
Izvestiya Akademii Nauk. Fizicheskaya Seriya. 51, No. 9 (1987) 1639.

Plastic Deformation and Hydrolytic Weakening in quartz : The Griggs-Blacic-Frank Mechanism
M. Heggie, R. Jones
Izvestiya Akademii Nauk. Fizicheskaya Seriya. 51, No. 9 (1987) 1634.

Interaction of impurities with dislocation cores in Silicon
M. Heggie, R. Jones, G. Lister, A. Umerski
Inst. of Phys. Conf. Series No. 104, Chap 1, p43-46, 1988.

Computer Modelling of Plasticity in Minerals - The hydrolytic weakening of Quartz
M. Heggie, R. Jones
Revue de Physique Applique 23, 670, 1988.

Interaction of Phosphorus with Dislocation Cores in Silicon
M. Heggie, R. Jones, A. Umerski
Materials Science Forum 65-66, 265-270, 1990, Trans Tech Publications, Zürich, Switzerland.

The N-C Platelet Model
P. Briddon, M. Heggie, R. Jones
Proc. of the Diamond Conference p. 19, Reading, 1990.

Interaction of Impurities with Dislocation Cores in Silicon
M. Heggie, A. Umerski, R. Jones
Phil. Mag. A 63, 571-84, 1991.

Theory of Nitrogen and Platelets in Diamond
P. Briddon, R. Jones, M. Heggie
Materials Science Forum 83-7, 457-462, 1991.

Theory of Nitrogen in Diamond: The Substitutional Atom, A centre and the Platelet
P. Briddon, R. Jones, M. Heggie
International Conference on New Diamond Science and Technology ed R. Messier, J. T. Glass, J. E. Butler and R. Roy, Washington, Materials Research Society, Pittsburgh, Pennsylvania, 1991, p 63.

Computer Modelling of Dislocation Glide in Ice Ih
R. Jones, M. Heggie , S. Maynard
Proc. of Physics and Chemistry of Snow and Ice ed N Maeno and T Hondoh, Hokkaido University Press, Sapporo, Japan, p 497-501, 1992.

Local Density Functional Pseudopotential Calculations of the quartz Structure and Hydrogarnet Defect
J. Purton, R. Jones, M. Heggie, S. Öberg, C. Catlow
Phys. Chem. Minerals 18, 389-92, 1992.

Molecular Diffusion of Oxygen and Water in Crystalline and Amorphous Silica
M. Heggie, R. Jones, C. Latham, S. Maynard, P. Tole
Phil. Mag. B 65, 363-71, 1992.

Ab initio Calculation of the Structure of Molecular Water in Quartz
R. Jones, S Öberg, M. Heggie, P. Tole
Phil. Mag. Lett. 66, 61-6, 1992.

Theory of the Structure and Properties of C60 and C60H.
R. Jones, M. Heggie, C. Latham, V. Torres, S. Öberg, S. Estreicher
Proc. of the Diamond Conference Cambridge, p.20, 1992.

Ab initio Computer Models of CVD Diamond Growth
C. Latham, M. Heggie, R. Jones
Proc. of the Diamond Conference Cambridge, p.22, 1992.

Calculations of energy barriers to CVD diamond growth
C. Latham, M. Heggie, R. Jones
Diamond Optics V ed A Feldman \& S. Holly, Eds., Proc. SPIE 1759, 135-144, 1992.

Density Functional Calculations of the Structure and Properties of Impurities in and Dislocations in Semiconductors
R. Jones, A. Umerski, P. Sitch, M. Heggie, S. Öberg
Phys. Stat. Sol., (a) 138, 369, 1993.

Ab initio Energetics of CVD growth Reactions on the Three Low-Index Surfaces of Diamond
C. Latham, M. Heggie, R. Jones
Diamond and Related Materials 2, 1493-99, 1993.

Ab Initio Total Energy Calculations of Impurity Pinning in Silicon
M. Heggie, R. Jones, A. Umerski
Phys. Stat. Sol., (a) 138, 383-7, 1993.

Theory of Dislocations in Gallium Arsenide
R. Jones, P. Sitch, S. Öberg, M. Heggie
ICDS-17 ed J. Jantsch, Materials Science Forum 143-47, Trans Tech Publications, Zürich, p.143-7, 1994.

The energetics of hydrogenic reactions at diamond surfaces calculated by a local spin-density functional theoretical method
C. Latham, M. Heggie, R. Jones, P. Briddon
Diamond and Related Materials 3, 1370-74, 1994.

Impurity Effects on the Dislocation Structure in GaAs
P. Sitch, R. Jones, M. Heggie, S. Öberg
Solid State Phenomena 35-36, 501-6, 1994.

First Principles Calculations of the Energy Barrier to Dislocation Motion in Si and GaAs
S. Öberg, P. Sitch, R. Jones, M. Heggie
Phys. Rev. B In Press, 1995.
Postscript

The Structures of Dislocations in GaAs and their Modification by Impurities
P. Sitch, R. Jones, S. Öberg, M. Heggie
Phys. Rev. B Rapid Communications 50, 17717-720, 1995.
Postscript

Forward to Dr. R. Jones publications by Heggie, M.I. (1 publication).