Department of Physics
Dr. R. Jones publications in Semicond Sci and Tech

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Ab initio Calculations on Thermal Donors in Si : an over-coordinated O atom model for the NL10 and NL8 centres
R. Jones
Semicond. Sci. and Tech. 5, 255-90, 1990.

Ab initio Calculations of the Structure and Dynamical Properties of Boron Double Acceptors in GaAs
R. Jones, S. Öberg
Semicond. Sci. and Tech. 6, 1093-5, 1991.

Theory of Substitutional Carbon and Boron in Silicon
R. Jones, S. Öberg
Semicond. Sci. and Tech. 7, 27-30, 1992.

Theory of B-As_i Complexes in Gallium Arsenide
R. Jones, S. Öberg
Semicond. Sci. and Tech. 7, 429-31, 1992.

Instabilities in Simple Models of C-Asi Defects in GaAs
R. Jones, S. Öberg
Semicond. Sci. and Tech. 7, 855-57, 1992.

Theoretical and Isotopic Infrared Absorption Investigations of Nitrogen-Oxygen Defects in Silicon
R. Jones, C. Ewels, J. Goss, J. Miro, P. Deák, S. Öberg, F. Berg Rasmussen
Semicond. Sci. and Tech. 9, 2145-48, 1994.
Postscript

Theory of Si Donor-Acceptor Complexes in GaAs
R. Jones, S. Öberg
Semicond. Sci. and Tech. 9, 2291-4, 1994.
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Forward to Dr. R. Jones publications in Solid State Communications (1 publication).