Energetic evidence for mixed dimer growth on the Si(001)/Ge(2x1) surface

To be published in Surface Science (1997)

S.J.Jenkins and G.P.Srivastava

Semiconductor Physics Group, Department of Physics, University of Exeter, Stocker Road, Exeter EX4 4QL, United Kingdom

We present results of first-principles pseudopotential calculations for an ordered monolayer growth of Ge on Si(001)(2x1). Our results strongly support the asymmetric Ge-Ge dimer model. We also provide a detailed discussion of the nature of the bonding within the overlayer and between the overlayer and the substrate.

Stephen Jenkins
Last modified: Wed Sep 18 16:54:37 BST 1996