Density functional and quasiparticle calculations on the GaP(110) surface
Published in Surface Science 331-333, 1238 (1995)
Semiconductor Physics Group, Department of Physics, University of Exeter, Stocker Road, Exeter EX4 4QL, United Kingdom
(Received 1 August 1994; accepted for publication 5 December 1994)
We describe a method for calculating quasiparticle band structures at semiconductor surfaces. The method uses a simple
model which includes contributions from electronic with surface plasmons in addition to both local field and dynamic
effects. Starting with a local density pseudopotential calculation for the GaP(110) surface as a basis, the quasiparticle states
are calculated with minimum of further computation. We observe quantitatively different quasiparticle corrections for the
surface states as compared to those for bulk-like states. Notably, the lowest unoccupied surface state is pushed further
up into the projected bulk conduction bands while the occupied surface states are lowered, in line with simple ideas
of band gap broadening at free surfaces.
Stephen Jenkins
Last modified: Tue Sep 12 15:38:28 1995