Simple approach to self-energy corrections in semiconductors and insulators
Published in Phys. Rev. B 48, 4388 (1993)
Semiconductor Physics Group, Department of Physics, University of Exeter, Stocker Road, Exeter EX4 4QL, United Kingdom
(received 7 December 1992; revised manuscript received 16 February 1993)
We have used the Sterne-Inkson [P.A.Sterne and J.C.Inkson, J. Phys. C 17, 1497 (1984)] extreme
tight-binding model for the self-energy corrections to the top of the valence band and bottom of the conduction
band within the GW approximation. Application of these corrections to both exchange-only local-density-approximation
(LDA) calculations and the LDA with Ceperley-Alder correlation calculations for five materials C, Si, Ge, GaAs,
and ZnSe has been found to result in good agreement with experimental data and recent theoretical results. The LDA
calculations were performed by using the plane-wave-basis and norm-conserving pseudopotentials.
Stephen Jenkins
Last modified: Tue Sep 12 15:36:02 1995