G.P. Srivastava Group publications by first author

If you have trouble locating any of these papers please contact an author for a reprint. A few of the later G.P. Srivastava Group papers are available as on line Postscript documents.

The derivation of pseudoatom information in germanium from total energy calculations
M A Ball and G P Srivastava
J Phys: Cond Matter 4, 1947-1958 (1992).

Derivation of pseudoatom information in GaAs
M A Ball and G P Srivastava
J Phys: Cond Matter 5, 2511-20 (1993).

Dimensionality and size effects in simple metals
I P Batra, S ciraci, G P Srivastava, C Y Fong and J Nelson
Phys Rev B 34, 8246-8257 (1986).

The atomic geometry of ZnSe(110): determination by total energy methods
A C Ferraz and G P Srivastava
J Phys C 19, 5987-5994 (1986).

The electronic band structure of (GaAs)n(AlAs)n superlattices
A C Ferraz and G P Srivastava
Semicond Sci Technol 1, 169-171 (1986).

Determination of the surface geometry of GaAs(110) by the total energy and force methods
A C Ferraz and G P Srivastava
Surf Sci 182, 161-178 (1987).

Atomic relaxation and electronic states in ultrathin Ge/ZnSe superlattices
A C Ferraz and G P Srivastava
Semicond Sci Technol 8, 67-72 (1993).

Nature of the lowest conduction band in thin GaAs/AlAs(110) superlattices
R J Gordon, Z Ikonic and G P Srivastava
Semicond Sci Technol 5, 269-273 (1990).

Atomic and electronic strudture of a monolayer ZnSe on the GaAs(110) surface
R J Gordon and G P Srivastava
Superlattices and Microstructures 9, 47-50 (1991).

Three-phonon relaxation times
R A H Hamilton and G P Srivastava
Phonon Scattering in Solids (Eds Challis, Rampton and Wyatt, Plenum Press, New York 1975) 370-374

Electronic charge densities for two isoelectronic series: Ge-GaAs-ZnSe and a-Sn-InSb-CdTe
T P Humphreys and G P Srivastava
Phys Stat Sol (b) 103, K85-K90 (1981).

Nonlocal pseudopotential calculations for two isoelectronic series: Ge-GaAs-ZnSe and a-Sn-InSb-CdTe
T P Humphreys and G P Srivastava
Phys Stat Sol (b) 112, 581 (1982).

Angle-resolved photoemission from the cleaved (110) surface of cadmium telluride
T P Humphreys, G P Srivastava and R H Williams
J Phys C 19, 1259-1271 (1986).

Intervalley interference effects in quantum well structures
Z Ikonic, V Milanovic, J C Inkson, G P Srivastava and D Tjapkin
Proceedings of XVIII MIEL (Ljubljana, Yugoslavia 1990) 489-492.

On the linewidth of G- and X-like intersubband optical transitions in semiconductor quantum wells
Z Ikonic, J C Inkson and G P Srivastava
Solid State Commun 73, 421-424 (1990).

On level splitting by intervalley interference effects in semiconductor quantum wells
Z Ikonic, J C Inkson and G P Srivastava
Solid State Commun 76, 117-119 (1990).

Intersubband absorption line broadening in In0.53Ga0.47As/In0.52Al0.48As quantum wells: a pseudopotential calculation
Z Ikonic, G P Srivastava and J C Inkson
Solid State Commun 81, 841-843 (1992).

Ordering of conduction band states in (GaAs)n(AlAl)n[001].and [110] superlattices
Z Ikonic, J C Inkson and G P Srivastava
Semicond Sci Technol 7, 648-653 (1992).

Ordering of lowest conduction band states in (GaAs)n(AlAl)m[111] superlattices
Z Ikonic, G P Srivastava and J C Inkson
Phys Rev B 46, 15150-5 (1992).

Calculation of X-valley intersubband optical transitions linewidth in [111] grown AlAs/(GaAl)As quantum wells
Z Ikonic, G P Srivastava and J C Inkson
Solid State Commun 85, 327-330 (1993).

Twinning superlattices
Z Ikonic, G P Srivastava and J C Inkson
Solid State Commun 86, 799-802 (1993).

Electronic properties of twin boundaries and twinning superlattices in diamond/zincblende semiconductors
Z Ikonic, G P Srivastava and J C Inkson
Phys Rev B 48, 17181-93 (1993).

Electronic structure of twinning superlattices
Z Ikonic, G P Srivastava and J C Inkson
Surf Sci 307-309, 880-884 (1994).

Electronic structure of [113]-grown (GaAs)m(AlAs)n superlattices
Z Ikonic, G P Srivastava and J C Inkson
Phys Rev B 49, 10749-52 (1994).

Localised states in the presence of a phosphorus vacancy in GaP
M Jaros and G P Srivastava
J Phys Chem Solids 38, 1399-1401 (1977).

A simple approach to self-energy corrections in semiconductors and insulators
S J Jenkins, G P Srivastava and J C Inkson
Phys Rev B 48, 4388-97 (1993). Abstract

Density functional and quasiparticle calculations on the GaAs(110) surface
S J Jenkins, G P Srivastava and J C Inkson
Surf Rev and Lett 1, 473-476 (1994). Abstract

An ab-initio calculation of ground state and excited state properties of Gallium Nitride
S J Jenkins, G P Srivastava and J C Inkson
J Phys: Cond Matter 6, 8781-8794 (1994). Abstract

Density functional and quasiparticle calculations on the GaAs(110) surface
S J Jenkins, G P Srivastava and J C Inkson
Proc 22nd Int Conf on Phys of Semicond (Vancouver, Canada) (to be published early 1995). Abstract

Density functional and quasiparticle calculations on the GaP(110) surface
S J Jenkins, G P Srivastava and J C Inkson
Surf Sci (in press)(1995). Abstract

Angle-resolved photoelectron spectroscopy -the cleaved (110) surface of indium phosphide
A McKinley, G P Srivastava and R H Williams
J Phys C 13, 1581-91 (1980).

Laser cleaned silicon surfaces-electronic structure and surface crystallography
A McKinley, R H Williams, A Parke and G P Srivastava
Vacuum 31, 549-552 (1981).

The influence of adsorbate layers in controlling Schottky barriers
V Montgomery, R H Williams and G P Srivastava
J Phys C 14, L191-L194 (1981).

Finite fields and intervalley scattering in a resonant tunnelling quantum wire and dot double barrier structure using a multiband microscopic layer method
V Narayan, G P Srivastava and J C Inkson
Superlattices and Microstructures (in press)(1995).

The electronic band structure of SnS
A W Parke and G P Srivastava
Phys Stat Sol (b) 101, K31-K35 (1980).

The electronic structure of cleaved silicon (111) surfaces following adsorption of aluminium
A W Parke, A McKinley, R H Williams and G P Srivastava
J Phys C 13, L369-K374 (1980).

Alloying effect in the electronic properties of thin GaAs/AlAs superlattices
B Samra, R J Gordon and G P Srivastava
Semicond Sci Technol 4, 322-326 (1989).

Chemisorption of aluminium on GaAs(110)
W G Schmidt and G P Srivastava
J Phys: Cond Matter 5, 9025-9036 (1993).

First-principles calculations of interface phonons of an epitaxial Sb monolayer on GaAs(110) and InP(110)
W G Schmidt and G P Srivastava
Solid State Commun 89, 345-348 (1994).

III-V(110)/Sb(1 ML): Structural and dynamical properties
W G Schmidt and G P Srivastava
Surf Sci (in press)(1995).

Semiempirical pseudopotential calculations for the electronic structure of zincblende semiconductors
I Singh and G P Srivastava
Phys Stat Sol (b) 108, 467-473 (1981).

Complementary Variational Principles (REVIEW ARTICLE)
G P Srivastava and R A H Hamilton
Phys Reports 38C, 1-86 (1978).

Theory of the Cohesive Energies of Solids (REVIEW ARTICLE)
G P Srivastava and D Weaire
Advances in Physics 36, 463-517 (1987).

Ab-Initio Computer modelling of semiconductor surfaces (REVIEW ARTICLE)
G P Srivastava and R Jones
Advanced Materials 4, 482-489 (1992).

Computers calculate silicon surface structure
G P Srivastava and R Jones
Physics World 4, 28 (1991).

Parallel studies reconstruct silicon
G P Srivastava
Physics World 5, 20-21 (1992).

Three-phonon processes and third-order atomic coupling constants
G P Srivastava, D P Singh and G S Verma
Solid State Phys and Nucl Phys (India) 12C, 187-190 (1969).

Variational treatment of the Ziman limit of thermal resistance due to umklapp processes
G P Srivastava and G S Verma
Solid State Phys and Nucl Phys (India) 13C, 531-534 (1970).

A two-sided variational approach for phonon conductivity
G P Srivastava
Solid State Phys Nucl Phys (India) 15C, 491-494 (1973).

Acoustic-optical phonon interactions in solids
G P Srivastava
Phonon Scattering in Condensed Matter (Ed H J Maris, Publ : Plenum 1979) 149-153

Influence of deep levels on Schottky barrier formation
G P Srivastava
Semi-Insulating III-V Materials (Ed. G J Rees, Shiva Publ 1980) 296-298

Phonon conductivity due to nondiagonal energy-flux operator
G P Srivastava
J Physique 42 C6:149-151 (1981).

Role of thermal expansion in the phonon conductivity of solids
G P Srivastava
J Physique 42 C6:253-255 (1981).

Phonons in germanium along the [110] direction: 'Direct' approach
G P Srivastava and K Kunc
Phonon Physics (Publ: World Scientific Publ Pte Ltd Singapore 1985) 953-955

Electronic states in the ultrathin superlattices (GaAs)n(AlAs)n and (GaAs)n(ZnSe)n
G P Srivastava
Inst Phys Conf Ser No 91: Chapter 6 (int Symp GaAs and Related Compounds, Heraklion, Greece, 1987) 529-532

Discussion on paper "STM studies of Fermi-level pinning on the GaAs(001) surface"
G P Srivastava
Phil Trans of the Royal Soc : physical sciences 344, 543 (1993).

Discussion on paper "Control of electrical barriers at semiconductor heterojunctions by interface doping"
G P Srivastava
Phil Trans of the Royal Soc : physical sciences 344, 585 (1993).

Temperature dependence of the bounds on thermal resistance due to U-processes
G P Srivastava and G S Verma
Phys Stat Sol (b) 47, 669 (1971).

Choice of trial function for the calculation of thermal resistivity due to electron-phonon scattering
G P Srivastava and G S Verma
Solid State Commun 9 2077-2079 (1971).

On the bounds on the three-phonon U-resistance
G P Srivastava and G S Verma
Phys Stat Sol (b) 50, K121- (1972).

Second upper-bound on the three-phonon resistivity in Ge
G P Srivastava and G S Verma
Phys Lett 41A, 61- (1972).

Variational treatment of Ziman limit conductivity
G P Srivastava and G S Verma
Ind J Pure and Appl Phys 10, 750- (1972).

Three-phonon scattering strengths and Ziman limit of resistivity due to three-phonon scattering processes in Ge
G P Srivastava, D P Singh and G S Verma
Phys Rev B 6, 3053-3055 (1972).

Variational treatment of three-phonon scattering processes in an anisotropic insulator
G P Srivastava, D P Singh and G S Verma
Ind J Pure and Appl Phys 11, 79- (1973).

Contribution of longitudinal and transverse phonons towards the thermal conductivity of Ge in the Ziman limit
G P Srivastava and G S Verma
Phys Rev B 7, 897-898 (1973).

On the boundary scattering of phonons
G P Srivastava, and G S Verma
Can J Phys 51, 223-225 (1973).

On the boundedness of the eigenvalue spectrum of phonon collision operator
G P Srivastava
Phys Lett 45A, 321 (1973).

Lower and upper bounds on the three-phonon U-resistance in Ge
G P Srivastava
Phys Stat Sol (b) 56, K39- (1973).

Anharmonic relaxation of phonons
G P Srivastava
Pramana (India) 3, 209-217 (1974).

Calculation of bounds on the eigenvalue spectrum of anharmonic phonon collision operator
G P Srivastava
Phys Lett 54A, 22- (1975).

Complementary variational principles for lattice thermal conductivity
G P Srivastava
Phys Stat Sol (b) 68, 213-222 (1975).

Calculation of some variational bound results on lattice thermal conductivity of Ge
G P Srivastava
J Phys C 8, 4147-4156 (1975).

Calculation of anharmonic relaxation of phonons
G P Srivastava
Pramana (India) 6, 1-18 (1976).

Comparison of high-temperature three-phonon resistivities from different theoretical models
G P Srivastava
Pramana (India) 7, 236-244 (1976).

Derivation and calculation of a sequence of lower bounds for lattice thermal conductivity
G P Srivastava
Phys Stat Sol (b) 77, 131-140 (1976).

Calculation of lattice thermal conductivity of Ge from 4 - 900 K
G P Srivastava
Phil Mag 34, 795-809 (1976).

On the use of variational n-parameters trial function in the calculation of lattice thermal conductivity
G P Srivastava
J Phys C 9, L11-L13 (1976).

Derivation and calculation of complementary variational principles for lattice thermal conductivity
G P Srivastava
J Phys C 9, 3037-3053 (1976).

Hypercircle approach and complementary variational principles for lattice thermal conductivity
G P Srivastava
Phys Stat Sol (b) 60, 657-660 (1977).

Improvement of variational bounds on lattice thermal conductivity by scaling and Ritz procedures
G P Srivastava
J Phys C 10, 1843-1854 (1977).

A note on the nature of phonon collision operator
G P Srivastava
J Phys C 10, L63- (1977).

Electronic and optical properties of c- and a-Si
G P Srivastava
Phys Stat Sol (b) 85, K121-K126 (1978).

Role of optical phonons in the high-temperature thermal conductivity of semiconductors
G P Srivastava
Phys Stat Sol (b) 90, K125-K128 (1978).

Electronic structure of a neutral phosphorus vacancy in GaP and InP
G P Srivastava
Phys Stat Sol (b) 93, 761-765 (1979).

A model pseudopotential calculation of the electronic structure of Si(111) 1x1 surface
G P Srivastava
Solid State Commun 33, 1209-1212 (1980).

Phonon conductivity of insulators and semiconductors
G P Srivastava
J Phys Chem Solids 41, 357-368 (1980).

Diagonal and nondiagonal Peierls contribution to the thermal conductivity of anharmonic crystals
G P Srivastava and M Prasad
Phys Rev B 23, 4273-4275 (1981).

Semiempirical pseudopotential calculation of the clean (110) surface of InP
G P Srivastava and I Singh
Vacuum 31, 675-677 (1981).

Self-consistent pseudopotential calculation for the electronic structure of Ge
G P Srivastava
Phys Rev B 25, 2815-2820 (1982).

Self-consistent pseudopotential calculations for the electronic structure of bulk and (111) surface of a-Sn
G P Srivastava
J Phys C 15, 699-706 (1982).

Electronic structure and total energy of Si, Ge, and a-Sn by the self-consistent local pseudopotential method
G P Srivastava
J Phys C 15, 707-719 (1982).

Self-consistent pseudopotential calculations of the equilibrium bulk properties of diamond-type semiconductors
G P Srivastava
J Phys C 15, L739-L742 (1982).

Self-consistent nonlocal pseudopotential calculations for the ground state properties of a-Sn
G P Srivastava
J Phys C 16, 1649 (1983).

The electronic structure of cleaved indium phosphide (110) surfaces: experiment and theory
G P Srivastava, I Singh, V Montgomery and R H Williams
J Phys C 16, 3627-3640 (1983).

Broyden's method for self-consistent-field convergence acceleration
G P Srivastava
J Phys A 17, L317-L321 (1984).

Atomic structure and ordering in semiconductor alloys
G P Srivastava, J L Martins and A Zunger
Phys Rev B 31, 2561-2564 (Rapid Commun) (1985).

p-bonded chain structure for Ge on Si(111)
G P Srivastava, S Ciraci and I P Batra
Surf Sci 183, L290-L296 (1987).

The electronic band structure of (GaAs)n(AlAs)n and (GaAs)n(ZnSe)n superlattices
G P Srivastava and A C Ferraz
Surf Sci 189/190, 913-918 (1987).

Reply to "Comments on 'Atomic structure and ordering in semiconducto alloys' "
G P Srivastava, J L Martins and A Zunger
Phys Rev B 36, 2902-2905 (1987).

Electronic band structure of monolayer thin semiconductor superlattices
G P Srivastava
Vacuum 36, 233-236 (1988).

Phonon dispersion in the [110] direction: a testing ground for phenomenological models of germanium
G P Srivastava and K Kunc
J Phys C 21, 5087-5106 (1988).

Erratum: Atomic structure and ordering in semiconductor alloys
G P Srivastava, J L Martins and A Zunger
Phys Rev B 38, 12694 (1988).

Report on a Kellar plan course in first-year university physics
G P Srivastava
Phys Educ 24, 295-299 (1989).

Low lying conduction states in (GaAs)n(AlAs)n superlattices
G P Srivastava, R J Gordon and Z Ikonic
Superlattices and Microstructures 9, 43-46 (1991).

Electronic states on InP(110)-Sb(1ML)
G P Srivastava and R P Martin
J Phys: Cond Matter 4, 2007-2026 (1992).

Atomic geometries of InP(110)-Sb(1ML) and GaAs(110)-Sb(1ML)
G P Srivastava
Phys Rev B 46, 7300-7303 (rapid commun) (1992).

Atomic geometry and electronic structure of a monolayer of Sb on (110) GaAs and InP
G P Srivastava
Phys Rev B 47, 16616-19 (1993).

Atomic geometry, electronic states and bonding at the GaP(110)-Sb(1 ML) interface
G P Srivastava
J Phys: Cond Matter 5, 4695-4710 (1993).

Ab initio molecular dynamics study of InP(110)-Sb(1 ML)
G P Srivastava
Surf Sci 307-309, 326-334 (1994).

Chemisorption of antimony on III-V(110) surfaces
G P Srivastava
Surf Rev and Lett 1, 677-680 (1994).

Disorder effects on tunnelling through one dimensional double barrier quantum well structures - a coherent potential approach
W Tan, J C Inkson and G P Srivastava
Phys Rev B 49, 4372-78 (1993).

Subband structures of superlattices under strong in-plane magnetic fields
W Tan, J C Inkson and G P Srivastava
(NATO workshop on advanced research, Canada (Sept 1993)-- published in Quantum Well Interband Transition Physics and Devices, Eds. H C Liu et al; Kluwer Academic Publishers, 1994) 411-420

A microscopic study of Landau level states in quantum wires
W Tan, J C Inkson and G P Srivastava
Semicond Sci Technol 9, 1305-1315 (1994).

Geometry and electronic band structure of GaAs(110)-Bi(1 ML)
A Umerski and G P Srivastava
Phys Rev B 47, 8450-8453 (1993).

A robust method of calculating surface atomic geometry
A Umerski and G P Srivastava
Surf Sci 307-309, 680-684 (1994).

Calculated electronic band structures of III-V semiconductors with metallic overlayers
A Umerski and G P Srivastava
Surf Sci 307-309, 963-968 (1994).

Atomic geometry for III-V semiconductors with Bi overlayers
A Umerski and G P Srivastava
Surf Rev and Lett 1, 495-499 (1994)

Electronic band structures of InAs(110) and InAs(110)Bi(1 ML)
A Umerski and G P Srivastava
Surf Rev and Lett 1, 681-684 (1994).

Geometry and electronic structure of Se treated InP(110)
A Umerski and G P Srivastava
Surf Sci (in press)(1995).

Geometry and electronic band structure of an ordered monolayer deposition of Bi on III-V(110) semiconductor surfaces
A Umerski and G P Srivastava
Phys Rev B 51 (to appear 15 Jan 1995).

Theoretical study of the anharmonic decay of nonequilibrium LO phonons in semiconductor structures
Sarah Usher and G P Srivastava
Phys Rev B 50, 14179-14186 (1994).

Photoelectron Spectroscopy of Solids and Their Surfaces (REVIEW ARTICLE)
R H Williams, G P Srivastava and I T McGovern
Rep Prog Phys 43, 1357-1414 (1980).

Atomic structure and ordering in III-V semiconductor alloys
A Zunger, G P Srivastava and J L Martins
Bull Am Phys Soc 30, 602 (1985).