Çakmak
Theoretical
Physics
Çakmak
Mehmet ÇAKMAK
School of Physics
University of Exeter
Stocker Road
Exeter
EX4 4QL
UK
e-mail cakmak@excc.ex.ac.uk
Telephone (Exeter) 264198
Dept. Office 264151
Fax 264111
The dialling code for Exeter is 01392 (from UK),
+44 1392 (international).
My research subject is theoretical studies of structural and
electronic properties
of overlayers on semiconductor
surfaces
In particular, I have been working on S and
H2S-molecule adsorbed on the
InP(110), GaAs(110), GaP(110), Si(001) and Ge(001)
surfaces. ( H2
S-Si(001)-(1x2))
I have been working on disilane and
digermane on the Si(001)
and Ge(001) surfaces. Surface processes
during chemical vapor deposition and the atomic-layer epitaxy of
group-IV elements currently have received extensive interest. Although
this process is most important for the microelectronics industry,
a detailed theoretical understanding of these surfaces has not been
investigated. I am using an ab initio
pseudopotential LDA code
developed by my supervisor Dr. G.P. Srivastava.
Publications...
14-M. Çakmak and G.P. Srivastava,
Desorption of S, Se and Te from the Si(001) surface, to be
submitted Eur. Phys. Lett. (1999).
13-M. Çakmak,
S.C.A. Gay, and G.P. Srivastava
Adsorption of GeH2 on the Si(001) surface, to be
submitted Surf. Sci (1999).
12-S.C.A. Gay, M.
Çakmak and G.P. Srivastava, Comparative
study of Bi overlayers on the III-Sb(110)-(1x1) surfaces,
submitted to Surf. Sci (1999).
11-M. Çakmak, S.C.A. Gay and G.P. Srivastava,
Structure and energetics of segregated and nonsegregated H:Ge(001)/Si
and Cl:Ge(001)/Si, submitted to Surf. Sci
(1999).
10-M. Çakmak and G.P. Srivastava,
Dissociative adsorption of Si2H6 on the Si(001)
surface, submitted to Phys. Rev. B
(1999).
9-M. Çakmak and G.P. Srivastava,
Adsorption of partially and fully dissociated H2S molecule
on the Si(001) and Ge(001) surfaces, Phys. Rev. B 60, 5497 (1999). (Abstract)
8-M. Çakmak and G.P. Srivastava,
Ab initio study of the adsorption of H2S onto the
Si(001) surface, Sur. Sci. 433, 420 (1999).
7- M. Çakmak and G.P. Srivastava
, Adsorption and desorption of S on and off Si(001) studied by
Ab initio Density Functional Theory, J. Appl. Phys. 84,
6070 (1998). (Abstract)
6- M. Çakmak and G.P. Srivastava
,
Ab initio
study of atomic geometry, electronic states and
bonding for H2S-adsorption on III-V(110)-(1x1) surfaces,
Phys. Rev. B 57, 4486 (1998).
(Abstract)
5-M. Çakmak and G.P. Srivastava,
Theoretical study of the GaAs(110)-(1x1)-H2S surface,
Sur. Sci., 404, 658 (1998).
4-M. Çakmak and G.P. Srivastava,
An ab initio calculation of the adsorption of H2S
onto InP(110)-(1x1) surface, Appl. Sur. Sci. 123/124, 52 (1998).
3-H. M. Tutuncu, M.
Çakmak and G.P. Srivastava,
Structural, electronic and vibrational properties of the InSb(110)
surface, Appl. Sur. Sci. 123/124, 146 (1998).
2-M. Çakmak and G.P. Srivastava,
Calculation of atomic geometry, electronic states and bonding for the
S-deposited InP(110) surface, Phys. Rev. B 56, 1928 (1997). (Abstract)
1-M. Çakmak
and G.P. Srivastava,
A theoretical study of sulphur adsorption on InP(110),
Sur. Sci. 377, 592 (1997).
Should you like a reprint or pre-print of any or all of these then I
would be delighted to post them to you.
cakmak@excc.ex.ac.uk
Would you like to see My PhD thesis?
(PhD Thesis)
G.P. Srivastava
(Group Page)....
Theoretical
Physics Page. (Or up to the Exeter)
Personally...
my Personal
Home Page (on a different server)......under construction...!
Gazi
University (on a different server)
Mehmet Çakmak
<cakmak@excc.ex.ac.uk>
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Last modified: Sun Sep 18 17:11:18 BST 1999