Electrostatic Implications for Sb-Mediated Growth of Ge on the Si(001) Surface
To be published in Surface Science Letters (1997)
Semiconductor Physics Group, Department of Physics, University of Exeter, Stocker Road, Exeter EX4 4QL, United Kingdom
The initial stages of Sb-mediated growth of Ge on the Si(001) surface
are investigated using ab initio density functional theory. We
present results of calculations on the Si(001)-/Sb/Ge(2x1) and
Si(001)-/Ge/Sb(2x1) systems, which confirm that segregation of the Sb
layer is favourable. The -/Sb/Ge surface is found to possess novel
symmetric, elongated Ge dimers. We furthermore describe in detail the
nature of the bonding at the surface and note the formation of a
dipole layer in the -/Sb/Ge system which accounts for its relative
instability.
Stephen Jenkins
Last modified: Tue May 13 15:45:00 BST 1997