Atomic structure and bonding on GaAs(001)/Sb(2x4)


To be published in Surface Science (1997)

G.P.Srivastava and S.J.Jenkins


Semiconductor Physics Group, Department of Physics, University of Exeter, Stocker Road, Exeter EX4 4QL, United Kingdom

We present results of ab initio pseudopotential calculations for the (2x4) reconstruction of the Sb-terminated GaAs(001) surface. Using the structural model recently proposed by Moriarty et al [1] we provide a detailed analysis of the atomic geometry and the nature of chemical bonding at the surface. The geometrical results are compared with the x-ray standing wave analysis of Sugiyama et al [2].
  1. P.Moriarty, P.H.Beton, Y.-R.Ma, M.Henini, and D.A.Woolf, Phys. Rev. B 53, 16 148 (1996)
  2. M.Sugiyama, S.Maeyama, F.Maeda, and M.Oshima, Phys. Rev. B 52, 2678 (1995)


Stephen Jenkins
Last modified: Fri Dec 6 13:20:41 GMT 1996