Energetic evidence for mixed dimer growth on the Si(001)/Ge(2x1) surface
To be published in Surface Science (1997)
Semiconductor Physics Group, Department of Physics, University of Exeter, Stocker Road, Exeter EX4 4QL, United Kingdom
We present results of first-principles pseudopotential calculations
for an ordered monolayer growth of Ge on Si(001)(2x1). Our results
strongly support the asymmetric Ge-Ge dimer model. We also provide a
detailed discussion of the nature of the bonding within the overlayer
and between the overlayer and the substrate.
Stephen Jenkins
Last modified: Wed Sep 18 16:54:37 BST 1996