Theoretical studies of GaAs(001)-Ge(2x1) and (1x2) structures
To be published in Surface Science (1996)
Semiconductor Physics Group, Department of Physics, University of Exeter, Stocker Road, Exeter EX4 4QL, United Kingdom
Recent LEED and STM studies have revealed dramatic structural changes on the GaAs(001) surface after submonolayer Ge deposition and annealing. In particular, it is found that the surface structure shows a poorly ordered (2x1) and a well ordered (1x2) superstructure after annealing at about 700 K and 875 K, respectively. In this work we report on a first principles pseudopotential study of the atomic geometry, electronic states, and bonding on these structures.
Stephen Jenkins
Last modified: Tue Sep 12 15:58:26 1995