Atomic structure of a monolayer of Ge on Si(001)(2x1)
To be published in Surf. Rev. and Lett. (1997)
Semiconductor Physics Group, Department of Physics, University of Exeter, Stocker Road, Exeter EX4 4QL, United Kingdom
We present results of first-principles pseudopotential calculations
for an ordered monolayer growth of Ge on Si(001)(2x1). Our results
strongly support the asymmetric Ge-Ge dimer model. We also provide a
detailed discussion of the nature of the bonding within the overlayer
and between the overlayer and the substrate.
Stephen Jenkins
Last modified: Fri Dec 6 14:12:46 GMT 1996