Atomic structure of the GaAs(001)-beta2(2x4) surface
To be published in Surf. Rev. and Lett. (1997)
Semiconductor Physics Group, Department of Physics, University of Exeter, Stocker Road, Exeter EX4 4QL, United Kingdom
We present detailed results of ab initio pseudopotential
calculations for equilibrium atomic geometry and chemical bonding on
the arsenic terminated GaAs(001)-beta2(2x4) surface. We find that
this surface is characterised by the presence of two distinct Ga-As
bond lengths between the first and second surface layers. This
feature is due to the presence of both three-fold and four-fold
co-ordinated Ga atoms in the second layer.
Stephen Jenkins
Last modified: Fri Dec 6 14:12:33 GMT 1996